Random telegraph noise from magnetic nanoclusters in the ferromagnetic semiconductor (Ga,Mn)As

M. Zhu; X. Li; G. Xiang; N. Samarth

doi:10.1103/PhysRevB.76.201201

Random telegraph noise from magnetic nanoclusters in the ferromagnetic semiconductor (Ga,Mn)As

Materials Science 2010-06-30 v1

Authors: M. Zhu , X. Li , G. Xiang , N. Samarth

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Abstract

Measurements of the low frequency electrical noise in the ferromagnetic semiconductor (Ga,Mn)As reveal an enhanced integrated noise at low temperature. For moderate localization, we find a 1/f normalized power spectrum density over the entire range of temperatures studied (4.2K < T < 70K). However, for stronger localization and a high density of Mn interstitials, we observe Lorentzian noise spectra accompanied by random telegraph noise. Magnetic field dependence and annealing studies suggest that interstitial Mn defects couple with substitutional Mn atoms to form nanoscale magnetic clusters characterized by a net moment of about 20 Bohr magnetons whose fluctuations modulate hole transport.

Keywords

random telegraph noise ferromagnetic semiconductor (Ga,Mn)As magnetic nanoclusters low frequency noise mn interstitials

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@article{arxiv.0708.1895,
  title  = {Random telegraph noise from magnetic nanoclusters in the ferromagnetic semiconductor (Ga,Mn)As},
  author = {M. Zhu and X. Li and G. Xiang and N. Samarth},
  journal= {arXiv preprint arXiv:0708.1895},
  year   = {2010}
}

Random telegraph noise from magnetic nanoclusters in the ferromagnetic semiconductor (Ga,Mn)As

Abstract

Keywords

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