We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices - it scales as I^2 at the low (I<10 uA) and high (I>10 mA) currents, and, rather unusually, remain nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, reveal a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with increasing temperature. The obtained results are important for development of noise spectroscopy-based approaches for device reliability assessment for the high-power diamond electronics.
@article{arxiv.2112.14695,
title = {Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment},
author = {Subhajit Ghosh and Harshad Surdi and Fariborz Kargar and Franz A. Koeck and Sergey Rumyantsev and Stephen Goodnick and Robert Nemanich and Alexander A. Balandin},
journal= {arXiv preprint arXiv:2112.14695},
year = {2022}
}