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Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the…
Electron fully spin-polarized edge states in graphene emerged at the interfaces of a nonuniform magnetic field are studied numerically in a tight-binding model, with both the orbital and Zeeman-splitting effects of magnetic field…
Via the spin-Hall effect and its inverse, in-plane charge currents in a normal metal$-$ferromagnet (N$|$F) bilayer can be used to excite and detect magnetization dynamics in F. Using a magneto-electric circuit approach, we here consider the…
We investigate conductances and current correlations in a system consisting of a normal multichannel conductor connected to one superconducting and two ferromagnetic electrodes. For antiparallel orientation of the ferromagnet polarizations,…
We report the theoretical investigation of noise spectrum of spin current and spin transfer torque for non-colinear spin polarized transport in a spin-valve device which consists of normal scattering region connected by two ferromagnetic…
We have observed the evolution of phase diagram and vortex pinning using a single ferromagnet/superconductor bilayer of [Co/Pt]8/Nb through a special demagnetization procedure. It induces a continuous and reversible change of the domain…
The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current. However, it is difficult to manipulate its spin…
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…
Properties are discussed of a ferromagnetic junction of the type "rod contacting with film". Very high current density of the order of $10^9$ A/cm$^2$ may be achieved in the contact region. We show it can lead to inversion of population of…
We theoretically study the spin current between two polarized Fermi gases with repulsive interactions near the itinerant ferromagnetic phase transition. We consider a two-terminal model where the left reservoir is fixed to be fully…
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…
Chiral molecular junctions offer a promising platform for realizing chiral-induced spin selectivity (CISS), where spin filtering occurs without external magnetic fields. Here, we investigate spin transport in such junctions by combining…
We present an extension to simple s-d models, aiming at simulating ultrafast magnetization dynamics and spin transport in metallic heterostructures. In particular, we consider an alternative spin dissipation channel due to a finite exchange…
Exerting control of the magnetic exchange interaction in heterostructures is of both basic interest and has potential for use in spin-based applications relying on quantum effects. We here show that the sign of the exchange interaction in a…
There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…
We study the transmission through single and double ferromagnetic barriers on the surface of a topological insulator. By adjusting the gate voltage and magnetization oreintation, the ferromagnetic barrier can be tuned into various…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an…
Molecular spintronics is made possible by the coupling between electronic configuration and magnetic po- larization of the molecules. For control and application of the individual molecular states it is necessary to both read and write…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…