Related papers: Enhanced spin Hall effect in semiconductor heteros…
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…
The spin Hall effect (SHE) is one of the promising phenomena to utilize a spin current as spintronics devices, and the theoretical understanding of its microscopic mechanism is essential to know how to control its response. Although the SHE…
Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate…
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin…
The spin Hall angle (SHA) is a measure of the efficiency with which a transverse spin current is generated from a charge current by the spin-orbit coupling and disorder in the spin Hall effect (SHE). In a study of the SHE for a Pt$|$Py…
The spin Hall effect is a phenomenon of inducing spin current by an external electric field. We recently proposed that this effect can occur in p-type semiconductors without relying upon any disorder scattering [S. Murakami et al., Science…
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including…
An intriguing feature of spintronics is the use of pure spin-currents to manipulate magnetization, e.g., spin-currents can switch magnetization in spin-torque MRAM, a next-generation DRAM alternative. Giant spin-currents via the spin Hall…
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose.…
Propagating, directionally dependent, polarized spin-currents are created in an anisotropic planar semiconductor microcavity, via Rayleigh scattering of optically injected polaritons in the optical spin Hall regime. The influence of…
We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a…
We study an electrically controlled quantum spin Hall antidot embedded in a two-dimensional topological insulating bar. Helical edge states around the antidot and along the edges of the bar are tunnel coupled. The close connection between…
The photonic spin Hall effect (SHE), featured by a spin-dependent transverse shift of an impinging optical beam driven by its polarization handedness, has many applications including precise metrology and spin-based nanophotonic devices. It…
The electric Hall effect (EHE) is a newly identified Hall effect characterized by a perpendicular electric field inducing a transverse charge current in two-dimensional (2D) systems. Here, we propose a spin and valley version of EHE. We…
The substantial amount of recent research into spin torques has been accompanied by a revival of interest in the spin-Hall effect. This effect contributes to the spin torque in many materials, including topological insulator/ferromagnet…
The enhanced spin Hall effect in Au metal due to the resonant skew scattering is studied with first-principles band structure calculations. Especially the gigantic spin Hall angle $\gamma_S \cong 0.1$ observed recently (T.Seki et al.,…
Since spin currents can be generated, detected, and manipulated via the spin Hall effect (SHE), the design of strong SHE materials has become a focus in the field of spintronics. Because of the recent experimental progress also the spin…
We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel…