Spin Hall Effect in p-type Semiconductors
Mesoscale and Nanoscale Physics
2017-08-23 v1 Materials Science
Abstract
The spin Hall effect is a phenomenon of inducing spin current by an external electric field. We recently proposed that this effect can occur in p-type semiconductors without relying upon any disorder scattering [S. Murakami et al., Science 301, 1348 (2003)]. This intrinsic effect is due to the ``Berry phase in momentum space'', representing topological structure of the Bloch band structure. We explain how the Berry phase brings about the spin Hall effect, and review several interesting aspects of this effect
Cite
@article{arxiv.cond-mat/0405003,
title = {Spin Hall Effect in p-type Semiconductors},
author = {Shuichi Murakami},
journal= {arXiv preprint arXiv:cond-mat/0405003},
year = {2017}
}
Comments
6 pages, 1 figure, prepared for Proceedings of International Symposium on Mesoscopic Superconductivity and Spintronics 2004 (Atsugi, Japan, March 1-4, 2004)