Related papers: Fine and Large Coulomb Diamonds in a Silicon Quant…
We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can…
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide…
We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real…
Coulomb blockade (CB) in a quantum dot (QD) with one anomalously broad level is considered. In this case many consecutive pronounced CB peaks correspond to occupation of one and the same broad level. Between the peaks the electron jumps…
Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics and biosensing applications as well as the domain of q-bits…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We…
We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the…
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots.…
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…
Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a…
Electron capture and emission by Coulomb scattering in self-assembled quantum dot (QD) devices is studied theoretically. While the dependence of the Coulomb scattering (Auger) rates on the local wetting layer electron density has been a…
Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer…
In this thesis I find an analytic expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of an island are all of the same order. I also study the correction to the…
Quantum Dimer Models (QDM) arise as low energy effective models for frustrated magnets. Some of these models have proven successful in generating a scenario for exotic spin liquid phases with deconfined spinons. Doping, i.e. the…
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present…
In a tunneling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the trasparency of the barriers and the temperature. Gate voltages allow for changes of the…