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Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen-terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a…
Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light…
We report results of quantum efficiency (QE) measurements carried out on a 150 nm thick nitrogen-incorporated ultrananocrystalline diamond terminated with hydrogen; abbreviated as (N)UNCD:H. (N)UNCD:H demonstrated a QE of $\sim$10$^{-3}$…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
Multi-donor architecture in silicon offers a promising direction towards scalable solid-state qubits and quantum technologies operating at practical conditions. However, the overlap of multiple donor wave-functions develops a complex…
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target…
We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $\delta $-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with…
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as…
Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low temperature electron transport through etched 50-70nm…
Research on diamond has intensified due to its exceptional thermal, optical, and mechanical properties, making it a key material in quantum technologies and high-power applications. Diamonds with engineered nitrogen-vacancy (NV) centers…
Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are…
We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined…
Heat transfer mediated by the Coulomb interaction reveals unconventional thermodynamic behavior and broadens thermodynamics research into fields such as quantum dynamics and information engineering. Although some experimental demonstrations…
Electronic states and transport phenomena in semiconductor quantum dots are studied theoretically. Taking account of the electron-electron Coulomb interaction by the exact diagonalization method, the ground state and low-lying excited…
A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
We study the transport through a quantum dot, in the Kondo Coulomb blockade valley, embedded in a mesoscopic device with finite wires. The quantization of states in the circuit that hosts the quantum dot gives rise to finite size effects.…
We investigate theoretically the transport properties of the side-coupled double quantum dots in connection with the experimental study of Sasaki {\it et al.} Phys.Rev.Lett.{\bf 103}, 266806 (2009). The novelty of the set-up consists in…
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…
We analyze the transport properties of a double quantum dot device in the side-coupled configuration. A small quantum dot (QD), having a single relevant electronic level, is coupled to source and drain electrodes. A larger QD, whose…