Related papers: Fine and Large Coulomb Diamonds in a Silicon Quant…
A graphene nanoribbon (GNR) with orientation along its principle axis was obtained through a mechanical tearing process, and a quantum dot device was fabricated from the GNR. We have studied the transport property of the GNR quantum dot…
A systematic study is made on the time-dependent dynamic transport characteristics of the side-coupled double quantum-impurity system based on the hierarchical equations of motion. It is found that the transport current behaves like a…
We study transport through a double quantum dot, both in the sequential tunneling and cotunneling regimes. Using a master equation approach, we find that, in the sequential tunneling regime, the differential conductance $G$ as a function of…
We propose a device for studying the Fermi-Hubbard model with long-range Coulomb interactions using an array of quantum dots defined in a semiconductor two-dimensional electron gas system. Bands with energies above the lowest energy band…
The influence of excited levels on nonlinear transport properties of a quantum dot weakly coupled to leads is studied using a master--equation approach. A charging model for the dot is compared with a quantum mechanical model for…
We report on Coulomb blockade and Coulomb diamond measurements on an etched, tunable single-layer graphene quantum dot. The device consisting of a graphene island connected via two narrow graphene constrictions is fully tunable by three…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
We calculate the nonlinear cotunneling conductance through interacting quantum dot systems in the deep Coulomb blockade regime using a rate equation approach based on the T-matrix formalism, which shows in the concerned regions very good…
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…
A photonic crystal nanocavity with a Quality (Q) factor of 2.3 x 10^5, a mode volume of 0.55($\lambda/n$)^3, and an operating wavelength of 637 nm is designed in a silicon nitride (SiN_x) ridge waveguide with refractive index of 2.0. The…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have…
Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and…
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…
We present the experimental realization of a Quantum Dot (QD) operating as a high-frequency noise detector. Current fluctuations produced in a nearby Quantum Point Contact (QPC) ionize the QD and induce transport through excited states. The…
The non-Fermi-liquid properties of an ultrasmall quantum dot coupled to a lead and to a quantum box are investigated. Tuning the ratio of the tunneling amplitudes to the lead and box, we find a line of two-channel Kondo fixed points for…
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here,…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…
Investigation of electrical conduction in polysilicon nanowires (polySiNW) with nanograins (5 to 20nm), based on Monte Carlo (MC) simulations and electrical measurements from 4K to 300K are presented. Some irregular Coulomb Oscillations…
A quantum dot is a sub-micron-scale conducting device containing up to several thousand electrons. Transport through a quantum dot at low temperatures is a quantum-coherent process. This review focuses on dots in which the electron's…