Related papers: Fine and Large Coulomb Diamonds in a Silicon Quant…
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we…
We study transport through a quantum dot in the fractional quantum Hall regime with filling factors \nu=2/3 and \nu=5/2, weakly coupled to the leads. We account for both injection of electrons to/from the leads, and quasiparticle…
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…
We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…
We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar…
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to…
We investigate the transport properties of a (small) quantum dot connected to Fermi liquid leads with a power-law density of states (DOS). Such a system, if experimentally realizable, will have interesting physical properties including: (i)…
Coulomb drag between nanoscale conductors is of both fundamental and practical interest. Here, we theoretically study drag in a double quantum-dot (QD) system consisting of a biased drive QD and an unbiased drag QD coupled via a direct…
Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…
We demonstrate that the presence of charge around a semiconductor quantum dot (QD) strongly affects its optical properties and produces non-resonant coupling to the modes of a microcavity. We first show that, besides (multi)exciton lines, a…
Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…
We report on electrical transport measurements in a carbon nanotube quantum dot coupled to a normal and a superconducting lead. Depending on the ratio of Kondo temperature $T_{K}$ and superconducting gap $\Delta$ the zero bias conductance…
Quantum dots are frequently used as charge sensitive devices in low temperature experiments to probe electric charge in mesoscopic conductors where the current running through the quantum dot is modulated by the nearby charge environment.…
In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such "quantum…
Long-term observations of photoluminescence at the single-molecule level were until recently very diffcult, due to the photobleaching of organic ?uorophore molecules. Although inorganic semiconductor nanocrystals can overcome this diffculty…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
We theoretically compare transport properties of Fano-Kondo effect with those of Fano effect. We focus on shot noise characteristics of a triple quantum dot (QD) system in the Fano-Kondo region at zero temperature, and discuss the effect of…