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The transverse charge density in a fast-moving nucleon is represented as a dispersion integral of the imaginary part of the Dirac form factor in the timelike region (spectral function). At a given transverse distance b the integration…
The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallization phenomenon. It was shown, however, that resistive…
We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at…
Electron transfer with changing occupation in the 4f subshell poses a considerable challenge for quantitative predictions in quantum chemistry. Using the example of cerium oxide, we identify the main deficiencies of common…
The list of textbook tunneling formulas is extended by deriving exact expressions for the transmission coefficient in graphene ribbons with armchair edges and the step-like and barrier-like profiles of site energies along the ribbon. These…
Organic water-gated thin-film transistors (WG-TFTs) are of great interest in developing low-cost and high-performance biosensors. The device's sensitivity to changes in measurement conditions can impair long-term operation, and care must be…
We investigate the Stark shift in Rydberg rubidium atoms through electromagnetically induced transparency for the measurement of direct current (dc) and 60~Hz alternating current (ac) voltages. This technique has direct applications to…
The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…
In this work, we report a new nanoscale phenomenon observed as photoemission intermittency (On-Off electron emission), manifested as stochastic bursts in electron yield at quasi-one-dimensional organic wires and silver nanoparticles…
Organic semiconductors show complex phenomena due to their high energetic disorder. A striking example is the possibility of an increased effective temperature T_eff of the charge carrier distribution relative to the lattice temperature,…
We discuss the fact that quantum capacitance of graphene-based devices leads to variation of it's charge density under changes of external magnetic field.The charge is conserved, but redistributes to substrate or other graphene sheet. We…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D)…
We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the…
A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally device physics, has been hampered by uncertainties in…
We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of…
We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual…
Charge-carrier transport at the semiconductor-gate dielectric interface in organic field-effect transistors is critically dependent on the degree of disorder in the typically semi-crystalline semiconductor layer. Charge trapping can occur…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
Spectral and transport properties of small molecule single-crystal organic semiconductors have been theoretically analyzed focusing on oligoacenes, in particular on the series from naphthalene to rubrene and pentacene aiming to show that…