We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignment between the molecular backbone and the reconstructed semiconductor surface atoms.
@article{arxiv.0807.3378,
title = {Controlling transistor threshold voltages using molecular dipoles},
author = {Smitha Vasudevan and Neeti Kapur and Tao He and Matthew Neurock and James M. Tour and Avik W. Ghosh},
journal= {arXiv preprint arXiv:0807.3378},
year = {2015}
}