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By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase of the conductance on a scale of a few tesla. This…
The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. We show how the…
We review recent transport experiments that reveal two-threshold voltage-current characteristics, marked by a significant increase in noise between the two threshold voltages, at low electron densities in the insulating regime in…
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room…
The effect of substitution atoms on the energy spectrum and the electrical conductivity of graphene was investigated in a Lifshitz one-electron tight-binding model. It is established that the ordering of impurity atoms results in a gap in…
We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a…
Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging frequency ranges, for a field accustomed to…
Momentum distributions of electron-positron pairs created from the vacuum by an oscillating in time electric field are calculated in the framework of quantum field theory. A pronounced enhancement of those distributions is observed as the…
Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…
We use a magnetometer probe based on the Zeeman shift of the rubidium resonant optical transition to explore the atomic magnetic response for a wide range of field values. We record optical spectra for fields from few tesla up to 60 tesla,…
Hybrid materials are crucial in photovoltaics where the overall efficiency of the heterostructure is closely related to the level of charge transfer at the interface. Here, using various metal / poly(3-hexylthiophene)(P3HT) heterostructure…
A cooled scanning probe microscope (SPM) has been used to image cyclotron orbits of electrons through high-mobility graphene in a magnetic field.1-5 In a hBN-graphene-hBN device patterned into a hall bar geometry, the magnetic field focuses…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
We present a Rydberg-atom interferometry-based technique for voltage measurement between electrodes embedded in an atomic vapor cell, enabling the detection of weak voltages ($<0.1$V) and unambiguous discrimination between positive and…
Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
We present transport measurements of electrons on the surface of liquid helium in a microchannel device in which a constriction may be formed by a split-gate electrode. The surface electron current passing through the microchannel first…
Threshold of the transverse mode coupling instability is calculated in frameworks of the square well model at arbitrary value of space charge tune shift. A new method of calculation is developed beyond the traditional expansion technique.…