Related papers: Threshold voltage and space charge in organic tran…
We provide a phenomenological formula which describes the low-frequency optical absorption of charge carriers in disordered systems with localization. This allows to extract, from experimental data on the optical conductivity, the relevant…
High quality single crystals of a ferromagnetic superconductor URhGe were successfully grown. The electrical resistivity was measured for the field along b-axis in the orthorhombic crystal structure in order to study precisely its field…
Transformers and transmission lines are critical components of a grid network. This paper analyzes the statistical properties of the electrical parameters of transmission branches and especially examines their interdependence on the voltage…
The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that…
We developed a resistance measurement using radio frequency reflection to investigate the electrical transport characteristics under destructive pulsed magnetic fields above 100 T. A homemade flexible printed circuit for a sample stage…
We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric…
Longitudinal and transverse voltages have been measured in zero external magnetic fields. In close vicinity of the superconducting transition nonzero transverse voltage has been observed while far away from Tc, both above and below no such…
Spectral and transport properties of the quasi two-dimensional adiabatic Su-Schrieffer-Heeger model are studied adjusting the parameters in order to model rubrene single-crystal field effect transistors with small but finite density of…
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…
There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of…
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a…
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the…
We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of…
Radio-frequency (RF) reflectometry is widely used for high-bandwidth readout of semiconductor quantum devices at cryogenic temperatures, but its application has mainly been limited to nanoscale structures with relatively small capacitances.…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…
Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has…
Processes occurring in the strong-field regime of QED are characterized by background electromagnetic fields of the order of the critical field $F_{cr}=m^2c^3/\hbar|e|$ in the rest frame of participating charges. It has been conjectured…