Related papers: Pulse width controlled resistivity switching at ro…
We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active…
In this work, we report direct as well as pulsed electric field-induced resistivity switching and its relaxation in a multiferroic insulator La2NiMnO6. At a fixed base temperature (Tb), the dc resistivity switches abruptly from a high to a…
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5-2.5 V…
We have investigated direct and pulsed current induced electroresistance in two manganites with different electronic and magnetic ground states: charge-orbital ordered 50 % Ca doped NdMnO3 and 50 % Mn doped LaNiO3. It has been shown that…
Basing on 2D computer simulation of physical processes in high-voltage reversibly-switched dynistors (RSD) important peculiarities of their submicrosecond pulse performance mechanisms have been studied. It is characteristic that on early…
Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
The hysteretic and reversible polarity-dependent resistive switch driven by electric pulses is studied in both Ag/Pr0.7Ca0.3MnO3/YBa2Cu3O7 sandwiches and single-layer Pr0.7Ca0.3MnO3 strips. The data demonstrate that the switch takes place…
We show that ac magnetoresistance at room temperature in La0.7Sr0.3MnO3 is extremely high (= 47% in H = 100 mT, f = 3-5 MHz), and magnetic field dependence of reactance exhibits a double peak behavior. However, magnitudes of the ac…
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported power-law behavior with drift coefficients in the 0.07 to…
The polarity-dependent resistive-switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately…
We have studied the effects of accumulating cyclic electrical pulses of increasing amplitude on the non-volatile resistance state of interfaces made by sputtering a metal (Au, Pt) on top of the surface of a cuprate superconductor…
The electrical resistivity of polycrystalline Bi2Sr2Ca2Cu3O10-x (Bi-2223) was measured vs. applied magnetic fields up to 0.45 T, applied currents up to 1 A, and temperature from liquid nitrogen temperature (LN2) to room temperature. In the…
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a…
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field…
We report on infrared reflectivity measurements of the $ab$-plane response of superconducting Bi$_2$Sr$_2$CuO$_6$ single crystals. The frequency dependent conductivity has a maximum near 700 cm$^{-1}$ at room temperature, which shifts to…
We first report that, for planar nematic MBBA, the electroconvection threshold voltage has a nonmonotonic temperature dependence, with a well-defined minimum, and a slope of about 0.12 V/degree near room temperature. Motivated by this…
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and…
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift coefficients measured using small voltage sweeps appear to…
An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 C is described in detail. One resistivity measurement during temperature cycling is also…