Related papers: Pulse width controlled resistivity switching at ro…
High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…
Critical temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching appears at 60 K, and then a reversible bipolar switching between the two states is…
Magnetoresistance of substituted lanthanum manganite (La0.5Eu0.5)0.7Pb0.3MnO3 in the pulse magnetic field H = 25 T was measured at different temperatures. Magnetoresistance relaxation with a characteristic time of 10 -3 s was found. It has…
We have investigated the dc and pulsed current-induced electroresistance in phase separated manganite Nd0.5Ca0.5Mn0.95Ni0.05O3 (NCMONi05) as a function of temperature and magnetic field. It is shown that the negative differential resistance…
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…
Bipolar resistive switching (BRS) phenomenon has been demonstrated in Mn3O4 using Al (Aluminum)/Mn3O4/FTO (Fluorine doped Tin Oxide) Resistive Random Access Memory (RRAM) device. The fabricated RRAM device shows good retention, non volatile…
We present direct evidence of above room temperature magneto-electricity in single-phase Li0.05Ti0.02Ni0.93O with above-ambient antiferromagnetic ordering. Temperature-hysteresis in warming/cooling heat-flow thermograms establishes a…
The electric pulse-induced responses of 1T-TaS2 and 1T-TaS1.6Se0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multiple steps of the…
We describe an electro-optical switch based on a commercial electro-optic modulator (modified for high-speed operation) and a 340V pulser having a rise time of 2.2ns (at 250V). It can produce arbitrary pulse patterns with an average…
We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is…
We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical…
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the…
We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…
We report a significant change in friction of a $\rm La_{0.55}Ca_{0.45}MnO_3$ thin film measured as a function of the materials resistive state under ultrahigh vacuum conditions at room temperature by friction force microscopy. While…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
In this paper, magnetoelectric effects of Sr Z-type hexaferrite, Sr3Fe24Co2O41, at room temperature is measured. The change in remanence magnetization was measured by applying a DC voltage or electric field across a slab of hexaferrite.…
In this paper, we demonstrate a pulse energy-governed nonlinear self-switching of femtosecond pulses at wavelength of 1700 nm in a highly nonlinear high index contrast dual-core fibre. The fibre structure is composed of two microdimension…
BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with…
In this study, we introduce a design concept that leverages pulse width variation to enable a reconfigurable intelligent surface (RIS) and to autonomously switch reflection properties between two angles without any active control system.…