We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5-2.5 V pulses with ~50-100 ns duration leading to ~0.4-1.1 mA peak reset currents resulting in amorphized lengths between ~50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 hour duration. Drift coefficients are in the range between ~0.02 and 0.1 with significant device-to-device variability and variations during the measurement period. At lower temperatures (higher resistance states) some devices show a complex dynamic behavior, with the resistance repeatedly increasing and decreasing significantly over periods in the order of seconds.
@article{arxiv.2401.04909,
title = {Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures},
author = {A B M Hasan Talukder and Md Tashfiq Bin Kashem and Raihan Khan and Faruk Dirisaglik and Ali Gokirmak and Helena Silva},
journal= {arXiv preprint arXiv:2401.04909},
year = {2024}
}