Related papers: First-Principles Study on Leakage Current through …
The atomic and electronic structures of the (001)-Si/(001)-gamma-Al2O3 heterointerface are investigated by first principles total energy calculations combined with a newly developed "modified basin-hopping" method. It is found that all…
Colossal Ion Conductivity (CIC) is the phenomenon in which large changes in oxygen conductivity are observed when a solid state oxygen electrolyte is placed in a heterolayer super lattice. Several hypotheses have been posed concerning both…
We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and…
We examine superconductivity in LaAlO$_3$/SrTiO$_3$ channels in which the channel width transitions from the 1D to 2D regime. The superconducting critical current is independent of the channel width and increases approximately linearly with…
Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional…
Isolated oxygen impurities and fully oxidized structures of four stable two-dimensional (2D) SiS structures are investigated by {\em ab initio} density functional calculations. Binding energies of oxygen impurities for all the four 2D SiS…
We theoretically investigate silicon doped bilayer graphene, Si-BLG, with different stoichiometry of Si-BLG structures. The dangling bonds of C-Si atoms are found at low concentration ratio of Si atoms inducing sp$^3$-hybridization of…
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are investigated, with a special focus on the modifications of…
Pitting corrosion is a much-studied and technologically relevant subject. However, the fundamental mechanisms responsible for the breakdown of the passivating oxide layer are still subjects of debate. Chloride anions are known to accelerate…
On-chip networks have been proposed as the interconnect fabric for future systems-on-chip and multi-processors on chip. Power is one of the main constraints of these systems and interconnect consumes a significant portion of the power…
We have performed first-principles calculations of Si/SiO$_2$ superlattices in order to examine their electronic states, confinement and optical transitions, using linearized-augmented-plane-wave techniques and density-functional theory.…
Recent reports on the spontaneous formation of H2O2(aq) at the air-water interface and the solid-water interface have been sensational. The speculated mechanism at the air-water interface is based on instantaneous ultrahigh electric fields…
The recent observation of unconventional superconductivity in thin films of LaNiO2 (critical temperature, Tc~10 K) and in bulk single crystals of La3Ni2O7 (327) under pressure (Tc~80 K), has brought to light a long sought-after class of…
The existence of conduction channels in lithium silicate (Li_2O)(SiO_2) is investigated. Regions of the system where many different ions pass by form channels and are thus spatially correlated. For a closer analysis the properties of the…
The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing…
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…
Seals are extremely useful devices to prevent fluid leakage. However, the exact mechanism of roughness induced leakage is not well understood. We present a theory of the leak-rate of seals, which is based on percolation theory and a…
We calculate the average conductivity sigma (omega) of interacting electrons in one dimension in the presence of a long-range random potential (forward scattering disorder). Taking the curvature of the energy dispersion into account, we…
We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO$_2$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though…
The structural and electronic properties of the LaAlO3/Si(001) interface are determined using state-of-the-art electronic structure calculations. The atomic structure differs from previous proposals, but is reminiscent of La adsorption…