Related papers: First-Principles Study on Leakage Current through …
A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provide the same equivalent oxide thickness (EOT) as $\rm SiO_2$,…
The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions.…
The correspondence between the steady state theory of current transfer and scattering theory in a system of coupled tight-binding models of 1-dimensional wires is explored. For weak interwire coupling both calculations give nearly identical…
We study the localized stationary solutions of the one-dimensional time-dependent Ginzburg-Landau equations in the presence of a current. These threshold perturbations separate undercritical perturbations which return to the normal phase…
Maximal leakage quantifies the leakage of information from data $X \in \mathcal{X}$ due to an observation $Y$. While fundamental properties of maximal leakage, such as data processing, sub-additivity, and its connection to mutual…
The formation of a hydroxylated native oxide layer on Si(001) under wet conditions is studied by means of first principles molecular dynamics simulations. Water molecules are found to adsorb and dissociate on the oxidised surface leading to…
Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an…
The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces of insulating oxides, especially LaAlO3/SrTiO3, has further enhanced the…
We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…
We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…
We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)-annealed samples, the interface state density ($D_{\rm…
Percolation is a concept widely used in many fields of research and refers to the propagation of substances through porous media (e.g., coffee filtering), or the behaviour of complex networks (e.g., spreading of diseases). Percolation…
Motivated by recent discoveries of novel superconductors such as Na$_x$CoO$_2\cdot y$H$_2$O and Sr$_2$RuO$_4$, we analysize features of quasi-particle scattering due to impurities and interfaces for possible gapful $d_{x^2-y^2}+id_{xy}$ and…
Oxide growth with semiconductor-like accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This yielded spectacular discoveries such as…
When real networks are considered, coupled networks with connectivity and feedback-dependency links are not rare but more general. Here we develop a mathematical framework and study numerically and analytically percolation of interacting…
Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2…
In situ high pressure neutron diffraction measured lengths of O H and H O pairs in hydrogen bonds in substances are shown to follow the correlation between them established from 0.1 MPa data on different chemical compounds. In particular,…
We propose a simple analytical model to explain possible appearance of the metallic conductivity in the two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ interface. Our model considers the interface within a macroscopic approach which is usual to…
We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER…