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In this paper we present a detailed analysis of the atomic and electronic structure of GaAs nanowires using first-principles pseudopotential calculations. We consider six different types of nanowires with different diameters all grown along…

Materials Science · Physics 2010-12-24 S. Cahangirov , S. Ciraci

The ability to follow Moore's Law has been the basis of the tremendous success of the semiconductor industry in the past decades. To date, the greatest challenge for device scaling is the required replacement of silicon dioxide-based gate…

Materials Science · Physics 2007-05-23 Clemens J. Foerst , Christopher R. Ashman , Karlheinz Schwarz , Peter E. Bloechl

Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of…

Quantum Physics · Physics 2026-04-21 Jack J. Turner , Christian W. Binder , Guido Burkard , Andrew J. Fisher

Understanding the acid-base behavior of silica surfaces is critical for many nanoscience and bio-nano interface applications. Silanol groups (SiOH) on silica surfaces exhibit two acidity constants--one as acidic as vinegar--but their…

Materials Science · Physics 2010-02-03 Kevin Leung , Ida M. B. Nielsen , Louise J. Criscenti

Seals are extremely useful devices to prevent fluid leakage. We present an effective medium theory of the leak-rate of rubber seals, which is based on a recently developed contact mechanics theory. We compare the theory with experimental…

Soft Condensed Matter · Physics 2009-11-17 B. Lorenz , B. N. J. Persson

Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…

Other Condensed Matter · Physics 2026-03-24 Juan P. Mendez , Coleman Cariker , Michael Titze , Alex A. Belianinov , Denis Mamaluy

We have performed electronic state calculations to clarify the initial stage of the oxidation of the Si- and C-faces in 4H-SiC based on the density-functional theory. We investigate how each Si and C atomic site is oxidized on C- and…

Materials Science · Physics 2016-12-02 Yu-ichiro Matsushita , Atsushi Oshiyama

We consider the transmission problem in presence of interfaces with imperfect bonding. The imperfect bonding condition is characterized by the positive resistance along the interface, which causes discontinuity of the potential across the…

Analysis of PDEs · Mathematics 2026-04-29 Shota Fukushima , Yong-Gwan Ji , Hyeonbae Kang

Electronic reconstruction at the polar interface LaMnO$_3$/SrMnO$_3$ (LMO/SMO) (100) resulting from the polar catastrophe is studied from a model Hamiltonian that includes the double and super exchange interactions, the Madelung potential,…

Materials Science · Physics 2010-12-07 B. R. K. Nanda , S. Satpathy

Amorphous silica ($a-SiO_2$) is a widely used inorganic material. Interestingly, the relationship between the local atomic structures of $a-SiO_2$ and their effects on ductility and fracture is seldom explored. Here, we combine large-scale…

Mesoscale and Nanoscale Physics · Physics 2023-04-17 Jiahao Liu , Jingjie Yeo

We are investigating the use of low temperature wafer-wafer bonding in the fabrication of next-generation particle pixel detectors. This bonding technique could enable the integration of fully processed CMOS readout wafers with high-Z…

Instrumentation and Detectors · Physics 2025-06-17 J. Wüthrich , K. Deplazes , A. Rubbia

Performance analysis of low Earth orbit (LEO) satellite-to-ground optical links relies on composite fading models that typically evaluate scintillation and angular loss under the assumption of statistical independence. While ensuring…

Signal Processing · Electrical Eng. & Systems 2026-05-12 Xinyan Xie , Xuesong Wang , Jinghua Zhang , Fengrui Yang , Yongheng Wen , Haoyang He , Dong Zhao

Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…

Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such…

High-k oxides such as SrTiO3 promise large capacitance, but their dielectric response is often limited by leakage currents due to reduced bandgaps. We show that introducing a thin barrier layer beneath SrTiO3 is a simple and effective way…

The two-dimensional electron gas formed at interfaces between SrTiO$_3$ and other materials has attracted much attention since extremely efficient spin-to-charge current conversion has been recently observed at these interfaces. This has…

Materials Science · Physics 2022-01-19 Shoma Arai , Shingo Kaneta-Takada , Le Duc Anh , Masaaki Tanaka , Shinobu Ohya

We report on a theoretical study showing that the leak conductance density, $\GL$, in the squid giant axon appears to be optimal for the action potential firing frequency. More precisely, the standard assumption that the leak current is…

Neurons and Cognition · Quantitative Biology 2015-05-13 Jeffrey Seely , Patrick Crotty

The kinetics of E' centers (silicon dangling bonds) induced by 4.7eV pulsed laser irradiation in dry fused silica was investigated by in situ optical absorption spectroscopy. The stability of the defects, conditioned by reaction with mobile…

Materials Science · Physics 2009-11-13 F. Messina , M. Cannas

Zr oxides and oxynitrides are promising candidates to replace precious metal cathodes in polymer electrolyte fuel cells. Oxygen reduction reaction activity in this class of materials has been correlated with the amount of oxygen vacancies,…

Materials Science · Physics 2025-02-18 Akitaka Nakanishi , Shusuke Kasamatsu , Jun Haruyama , Osamu Sugino

The two-dimensional electron gas (2DEG) at the LaAlO$_3$/SrTiO$_3$ interface exhibits gate tunable superconductivity with a domelike shape of $T_{\rm{C}}$ as a function of electron concentration. Here, we propose that the experimentally…

Superconductivity · Physics 2020-08-26 M. Zegrodnik , P. Wójcik