Intrinsic origin of electron scattering at 4H-SiC(0001)/SiO$_2$
Materials Science
2017-02-01 v1
Abstract
We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though there are no electrically active defects. The origin of the large scattering is explained by the behavior of the internal-space states (ISSs). Moreover, the effect of the ISSs is larger than that of the electrically active carbon-related defects. This result indicates that an additional scattering not considered in a conventional Si/SiO occurs at the SiC/SiO.
Keywords
Cite
@article{arxiv.1607.04399,
title = {Intrinsic origin of electron scattering at 4H-SiC(0001)/SiO$_2$},
author = {Shigeru Iwase and Christopher James Kirkham and Tomoya Ono},
journal= {arXiv preprint arXiv:1607.04399},
year = {2017}
}
Comments
17 pages, 5 figures