The atomic and electronic structures of the (001)-Si/(001)-gamma-Al2O3 heterointerface are investigated by first principles total energy calculations combined with a newly developed "modified basin-hopping" method. It is found that all interface Si atoms are fourfold coordinated due to the formation of Si-O and unexpected covalent Si-Al bonds in the new abrupt interface model. And the interface has perfect electronic properties in that the unpassivated interface has a large LDA band gap and no gap levels. These results show that it is possible to have clean semiconductor-oxide interfaces.
@article{arxiv.0909.1716,
title = {Understanding the Clean Interface between Covalent Si and Ionic Al2O3},
author = {H. J. Xiang and Juarez L. F. Da Silva and Howard M. Branz and Su-Huai Wei},
journal= {arXiv preprint arXiv:0909.1716},
year = {2009}
}