Related papers: Measurement of the shot noise in a single electron…
Frequency dependent current noise in ferromagnetic double junctions with Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin polarized…
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise…
We study the delta-T noise in the Kondo regime, which implies the charge current noise under the temperature bias for the SU(2) Kondo quantum dot. We propose an experimentally measurable quantity to quantify the low-temperature properties…
Shot noise and higher current moments T_M=<Tr (t^+t)^M> are studied within the Anderson model of disordered conductors in dimensions d= 2, 3 and 4. Here t denotes a transmission matrix. We calculate the conductance G=T_1, shot noise…
We have constructed a noise measurement setup for high impedance carbon nanotube samples. Our setup, working in the frequency range of 600 - 900 MHz, takes advantage of the fact that the shot noise power is reasonably large for high…
Fluctuations pose fundamental limitations in making sensitive measurements, yet at the same time, noise unravels properties that are inaccessible at the level of the averaged signal. In electronic devices, shot noise arises from the…
The shot noise power and the Fano factor of a spinless resonant level model is calculated. The Coulomb interaction which in this model acts between the lead electron and the impurity is considered in the first order approximation. The…
We measure telegraph noise of current fluctuations in an electrostatically defined quantum dot in bilayer graphene by real-time detection of single electron tunneling with a capacitively coupled neighboring quantum dot. Suppression of the…
We extend the theory of shot noise in coherent metals to shot noise in strange metals without quasiparticle excitations. This requires a generalization of the Boltzmann equation with a noise source to distribution functions which depend…
Quantum mechanics can strongly influence the noise properties of mesoscopic devices. To probe this effect we have measured the current fluctuations at high-frequency (5-90G Hz) using a superconductor-insulator-superconductor tunnel junction…
We generalize the scattering theory of quantum shot noise to include the full spin-density matrix of electrons injected from a spin-filtering or ferromagnetic electrode into a quantum-coherent nanostructure governed by various…
We measured the shot noise in fully epitaxial Fe/MgAl2OX/Fe-based magnetic tunneling junctions (MTJs). While the Fano factor to characterize the shot noise is very close to unity in the antiparallel configuration, it is reduced to 0.98 in…
We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model,…
We work out a theory of shot noise in a special case. This is a noise of the Coulomb drag current excited under the ballistic transport regime in a one-dimensional nanowire by a ballistic non-Ohmic current in a nearby parallel nanowire. We…
We study intrinsic noise of current in a superconducting single-electron transistor, taking into account both coherence effects and Coulomb interaction near a Cooper-pair resonance. Due to this interplay, the statistics of tunneling events…
We propose an electromechanical transducer based on a resonant-tunneling configuration that, with respect to the standard tunneling transducers, allows larger tunneling currents while using the same bias voltage. The increased current leads…
The quantum measurement process by a single-electron transistor or a quantum point contact coupled to a quantum bit is studied. We find a unified description of the statistics of the monitored quantity, the current, in the regime of strong…
This paper describes the setup and the results of the direct on-wafer measurements of a FET noise parameters obtained with a source-pull method at temperatures down to T=4K and in the 5-12 GHz frequency range. The setup consists of a…
We consider partially gapped one dimensional (1D) conductors connected to normal leads, as realized in fractional helical wires. At certain electron densities, some distinct charge mode develops a gap due to electron interactions, leading…
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a deeper understanding of the origin of these spurious dots, we…