Shot noise in ferromagnetic single electron tunneling devices
Mesoscale and Nanoscale Physics
2009-10-31 v1 Materials Science
Abstract
Frequency dependent current noise in ferromagnetic double junctions with Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin polarized tunneling currents; low frequency spin fluctuations and high frequency charge fluctuations. Spin accumulation in strongly asymmetric junctions is shown to lead to a negative differential resistance. We also show that large spin noise activated in the range of negative differential resistance gives rise to a significant enhancement of the current noise.
Keywords
Cite
@article{arxiv.cond-mat/9904341,
title = {Shot noise in ferromagnetic single electron tunneling devices},
author = {B. R. Bulka and J. Martinek and G. Michalek and J. Barnas},
journal= {arXiv preprint arXiv:cond-mat/9904341},
year = {2009}
}
Comments
8 pages, 13 eps-figures included