Related papers: Bit storage by $360^\circ$ domain walls in ferroma…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
Magnetic vortices in soft ferromagnetic nano-disks have been extensively studied for at least several decades both for their fundamental (as a "live" macroscopic realization of a field theory model of an elementary particle) as well as…
Unidirectional motion of magnetic domain walls is the key concept underlying next-generation domain-wall-mediated memory and logic devices. Such motion has been achieved either by injecting large electric currents into nanowires or by…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate of a memory cell for future nonvolatile data storage devices. Thus, understanding of the stability and dynamical behaviour of…
Electric field-induced magnetization switching in multiferroics holds profound promise for ultra-low-energy computing in beyond Moore's law era. Bistable nanomagnets in the multiferroics are usually deemed to be suitable for storing a…
Magnetic nanomaterials record information as fast as picoseconds in computer memories but retain it for millions of years in ancient rocks. This exceedingly broad range of times is covered by hopping over a potential energy barrier through…
The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), i.e., the tendency for magnetic domains to repeat the same pattern during field-cycling,…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…
Next-generation concepts for solid-state memory devices are based on current-driven domain wall propagation, where the wall velocity governs the device performance. It has been shown that the domain wall velocity and the direction of travel…
We show storage of the circular polarisation of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently readout through the…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…
The half antivortex, a fundamental topological structure which determines magnetization reversal of submicron magnetic devices with domain walls, has been suggested also to play a crucial role in spin torque induced vortex core reversal in…
The recently proposed dynamical multiferroic effect describes the generation of magnetization from temporally varying electric polarization. Here, we show that the effect can lead to a magnetic field at moving ferroelectric domain walls,…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted…
Magnetic domain walls in antiferromagnets have been proposed as key components for faster conventional information processing, thanks to their enhanced stability and ultrafast propagation. However, how non-conventional computing methods…