Related papers: Bit storage by $360^\circ$ domain walls in ferroma…
In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are…
A coding scheme is introduced, allowing to store a set of linked bit strings in planar magnetic nanoelements with holes. Analytical expressions for the corresponding magnetization distributions are developed up to a homotopy and the…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
We consider interaction effects related to a nonuniform magnetization in ferromagnetic nanowires and their possible generalization to nanorings. First we show that the electric current in a ferromagnetic nanowire with more than one domain…
Magnetization reversals through the formation of vortex state and the rotation of onion state are two processes with comparable probabilities for symmetric magnetic nanorings with radius of about 50 nanometers. This magnetic bistability is…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular…
Quantum systems are inherently dissipation-less, making them excellent candidates even for classical information processing. We propose to use an array of large-spin quantum magnets for realizing a device which has two modes of operation:…
We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate…
Nanomagnetic logic has emerged as a potential replacement for traditional CMOS-based logic because of superior energy-efficiency. One implementation of nanomagnetic logic employs shape-anisotropic (e.g. elliptical) ferromagnets (with two…
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic…
Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded…
A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select…
Using the ultra low damping NiMnSb half-Heusler alloy patterned into vortex-state magnetic nano-dots, we demonstrate a new concept of non-volatile memory controlled by the frequency. A perpendicular bias magnetic field is used to split the…
Nanomagnetic memory and logic are currently seen as promising candidates to replace current digital computing architectures due to its superior energy-efficiency, non-volatility and propensity for highly dense and low-power applications. In…
Digital magnetic recording is based on the storage of a bit of information in the orientation of a magnetic system with two stable ground states. Here we address two fundamental problems that arise when this is done on a quantized spin:…
We describe and analyze a cellular nonlinear network based on magnetic nanostructures for image processing. The network consists of magneto-electric cells integrated onto a common ferromagnetic film - spin wave bus. The magneto-electric…
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…
Nuclear spins in quantum dots are promising candidates for fast and scalable quantum memory. By utilizing the hyperfine interaction between the central electron and its surrounding nuclei, quantum information can be transferred to the…