Related papers: Very simple FET amplifier with a voltage noise flo…

A well-balanced detector with high sensitivity and low noise is presented in this paper. The two-stage amplification structure is used to increase electronic gain while keeping an effective bandwidth of about 70 MHz. In order to further…

A low-noise amplifier (LNA) amplifies a very low-power signal without significantly degrading its signal-to-noise ratio. This paper provides the design of a linear low noise amplifier with the transistor BFP 640 using bilateral approach…

We have built a parametric amplifier with a Josephson field effect transistor (JoFET) as the active element. The device's resonant frequency is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of…

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic…

This article analyzes the design of a low-noise amplifier intended as the input front-end for the measurement of the low-frequency components (below 10 Hz) of a 50 Ohm source. Low residual flicker is the main desired performance. This…

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which…

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…

A new approach was developed for the design of front-end circuits for semiconductor radiation detectors. The readout scheme consists of a first stage made of only a few components located close to the detector, and of a remote second stage…

A transimpedance amplifier has been designed for scanning tunneling microscopy (STM). The amplifier features low noise (limited by the Johnson noise of the 1 G{\Omega} feedback resistor at low input current and low frequencies), sufficient…

A tabletop low-noise differential amplifer with a bandwidth of 100 kHz is presented. Low voltage drifts of the order of 100 nV/day are reached by thermally stabilizing relevant amplifer components. The input leakage current is below 100 fA.…

An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external…

Amplifiers are ubiquitous in electronics and play a fundamental role in a wide range of scientific measurements. From a user's perspective, an ideal amplifier has very low noise, operates over a broad frequency range, and has a high dynamic…

In this study, we present the design and analysis of a Low Noise Amplifier tailored specifically for quantum applications. We selected the HEMT for its unique noise reduction properties, crucial for quantum engineering. The main goal is to…

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain…

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…

Any quantum device that amplifies coherent states of a field while preserving their phase generates noise. A nonlinear, phase-invariant amplifier may generate less noise, over a range of input field strengths, than any linear amplifier with…

The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene…

The many advantages of cryogenically-cooled Single-Flux Quantum (SFQ) circuits imply that the high speed and low voltage output signals must be amplified and interfaced with standard electronics. State-of-the-art low-noise and wide-band…

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor…

We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier…