Related papers: The microscopic study of a single hydrogen-like im…
We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of…
We present results of tight-binding spin-dynamics simulations of individual and pairs of substitutional Mn impurities in GaAs. Our approach is based on the mixed quantum-classical scheme for spin dynamics, with coupled equations of motions…
The local electronic structure of muons (Mu) as dilute pseudo-hydrogen in single-crystalline $\beta$-Ga$_2$O$_3$ has been studied by the muon spin rotation/relaxation ($\mu$SR). High-precision measurements over a long time range of $\sim$25…
Combining density-functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in…
We study the quantum interference effects induced by the Aharonov-Casher phase in asymmetrically confined two-dimensional electron and heavy-hole ring structures systems taking into account the electrically tunable spin-orbit (SO)…
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…
We have applied the photoexcited muon spin spectroscopy technique (photo-$\mu$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin…
Single-site and cluster dynamical mean-field methods are used to estimate the response of a doped Mott insulator to a charged impurity. The effect of correlations on the Thomas-Fermi screening properties is determined. The charge density,…
The rate of muon capture in a muonic hydrogen atom is calculated in heavy-nucleon chiral perturbation theory up to next-to-next-to leading order. To this order, we present the systematic evaluation of all the corrections due to the QED and…
We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have…
The relative immunity of muons to synchrotron radiation suggests that they might be used in place of electrons as probes in fundamental high-energy physics experiments. Muons are commonly produced indirectly through pion decay by…
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping…
The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The…
We present a theoretical study of ac charge transport arising from adiabatic temporal variation of zero-field spin splitting in a quasi-onedimensional hole system (realized, e.g., in a quantum wire or point contact). As in…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
We present an analysis of gated InGaAs/InAlAs heterostructures, a device platform to realize spinorbitronic functionalities in semiconductors. The phenomenological model deduced from our magnetotransport experiments allows us to correlate…
To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine…
We calculate the density-of-states and the spectral function of GaMnAs within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange…