Related papers: The microscopic study of a single hydrogen-like im…
The trapping of excitons in a semiconductor quantum well due to a circular symmetric nonhomogeneous magnetic field is studied. The effect of the spin state of the exciton on its trapping energy is analyzed, and the importance of the…
We present a Hamiltonian in real space which is well suited to study numerically the behavior of holes introduced in III-V semiconductors by Mn doping when the III$^{3+}$ ion is replaced by Mn$^{2+}$. We consider the actual lattice with the…
Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral…
Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the…
An operator formalism is developed for a description of charged electron-hole complexes in magnetic fields. A novel unitary transformation of the Hamiltonian that allows one to partially separate the center-of-mass and internal motions is…
Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a non-local geometry. Unlike previous measurements that…
The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs.…
Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits.…
The spin state of holes bound to Mn acceptors in GaMnAs is investigated by optical spectroscopy. Concentrations of Mn from 10^17 to 10^19 cm^-3 were studied as a function of magnetic field and temperature. The photoluminescence from…
We develop a theory for the spin-echo dynamics of a heavy hole in a quantum dot, accounting for both hyperfine- and electric-field-induced fluctuations. We show that a moderate applied magnetic field can drive this system to a…
The MuCap experiment measures the singlet rate Lambda_S of muon capture on the proton. A negative muon beam is stopped in a time projection chamber filled with ultra-pure hydrogen gas at 10 bar and room temperature. In combination with the…
We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a…
A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE)…
We have measured the optically injected excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Positive muons implanted deep in a wafer can interact with the excess carriers and directly probe the bulk carrier…
Luttinger holes with strong Zeemann and spin-orbit interactions in a wire proximity-coupled to a superconductor is a promising system for observation of Majorana fermions. Earlier treatments of confined Luttinger holes in wires ignored a…
We present a time-resolved optical study of the dynamics of carriers and phonons in Ga_{1-x}Mn_{x}As layers for a series of Mn and hole concentrations. While band filling is the dominant effect in transient optical absorption in…
We investigate theoretically the effect of nearby As (arsenic) vacancies on the magnetic properties of substitutional Mn (manganese) impurities on the GaAs (110) surface, using a microscopic tight-binding model which captures the salient…
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion…
Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn is determined by the impurity band rather than holes in the valence band. We discuss here the physical mechanism of FM mediated by the carriers in impurity band, where…
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and…