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Magnetoluminescence of spatially indirect dipolar excitons collected in 25 nm GaAs/AlGaAs single quantum well within a lateral potential trap has been studied in perpendicular magnetic field in Faraday geometry. The paramagnetic spin…
The singlet capture rate $\Lambda_S$ for the semileptonic weak process $\mu+p \to n+\nu_\mu$ has been measured in the MuCap experiment. The novel experimental technique is based on stopping muons in an active target, consisting of a time…
We develop a practical first-principles methodology to determine nonradiative carrier capture coefficients at defects in semiconductors. We consider transitions that occur via multiphonon emission. Parameters in the theory, including…
Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively…
A large admittance sector cyclotron filled with LiH wedges surrounded by helium or hydrogen gas is explored. Muons are cooled as they spiral adiabatically into a central swarm. As momentum approaches zero, the momentum spread also…
A microscopic Hamiltonian for interacting manganese impurities in diluted magnetic semiconductors (DMS) is derived. It is shown that in p -type III-V DMS the indirect exchange between Mn impurities has similarities with the Zener mechanism…
The interplay between clustering and exchange coupling in magnetic semiconductors for the prototype (Ga_{1-x},Mn_x)As with manganese concentrations x of 1/16 and 1/32 in the interesting experimental range is investigated. For x ~ 6 %, when…
Recent experiments on resonant tunneling structures comprising (Ga,Mn)As quantum wells [Ohya et al., Nature Physics 7, 342 (2011)] have evoked a strong debate regarding their interpretation as resonant tunneling features and the near…
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a…
Using hybrid density functional theory, we address point defects susceptible to cause charge compensation upon Mg doping of GaN. We determine the free energy of formation of the nitrogen vacancy and of several Mg-related defects. The…
The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very…
A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in…
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier.…
Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…
The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged…
An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin…
We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaP, GaAs and GaSb, keeping the transition metal impurity fixed.…
We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal that the shape of the confining potential dramatically…
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly…
In the envelope-function approximation, interband transitions produced by electric fields are neglected. However, electric fields may lead to a spatially local ($k$-independent) coupling of band (internal, pseudospin) degrees of freedom.…