Related papers: Improved structural ordering in sexithiophene thic…
The growth and ordering of a Pb layer deposited on Cu(001) at 150 K has been studied using atom beam scattering. At low coverage, ordered Pb islands with a large square unit cell and nearly hexagonal internal structure are formed. This is a…
Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant…
Polycrystalline {\alpha}-tantalum (110) films deposited on c-plane sapphire substrate by sputtering are used in superconducting qubits nowadays. However, these films always occasionally form other structures, such as {\alpha}-tantalum (111)…
We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF$_2$ which has been conventionally used as a substrate. By optimizing temperatures for…
Thin films are usually obtained by depositing atoms with a continuous flux. We show that using a chopped flux changes the growth and the morphology of the film. A simple scaling analysis predicts how the island densities change as a…
The free standing solid polymer nanocomposite films has been prepared through standard solution cast technique. The improvement in structural, microstructural and electrochemical properties has been observed on the dispersion of nanofiller…
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by…
When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monoatomic layers, such…
Single phase nano and micro crystalline silicon films deposited using SiF4/H2 plasma at different H2 dilution levels were studied at initial and terminal stages of film growth with spectroscopic ellipsometry (SE), Raman scattering (RS) and…
We investigated the high temperature decomposition behavior of wurtzite phase Ti$_{1-x}$Al$_{x}$N films using experimental methods and first-principles calculations. Single phase metastable wurtzite Ti$_{1-x}$Al$_{x}$N (x = 0.65, 0.75, 085…
We present a model for thin film growth by particle deposition that takes into account the possible evaporation of the particles deposited on the surface. Our model focuses on the formation of two-dimensional structures. We find that the…
We explore the effect of ionization fraction on the epitaxial growth of Cu film on Cu (111) substrate at room temperature. We compare thermal evaporation, dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS).…
We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and…
The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by…
The single-layer FeSe films grown on SrTiO3 (STO) substrates have attracted much attention because of its record high superconducting critical temperature (Tc). It is usually believed that the composition of the epitaxially grown…
The combination of large thickness ($>3$ $\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the…
In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum…
We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated…
The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $\alpha$-Ta (alpha-phase tantalum) thin films…