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Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and…
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies…
MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate…
g-C3N4 is a novel semiconductor photocatalyst material; however, the low specific surface area and rapid carrier compliance hinder its photocatalytic performance. On the other hand, the synthesis of 2D g-C3N4 with high crystallinity remains…
In the present contribution we review basic mathematical results for three physical systems involving self-organising solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting,…
In many growth processes particles are highly mobile in an active layer at the surface, but are relatively immobile once incorporated in the bulk. We study models in which atoms are allowed to interact, equilibrate, and order on the…
High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…
The crystallographic orientation of SrIrO3 surfaces is decisive for the occurrence of topological surface states. We show from DFT computations that (001) and (110) free surfaces have comparable energies, and, correspondingly, we…
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…
NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO…
High quality single crystals of heavy Fermion CeCoIn5 superconductor have been grown by flux method with a typical size of (1~2)mm x (1~2)mm x ~0.1 mm. The single crystals are characterized by structural analysis from X-ray diffraction and…
Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…
Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth…
The room temperature growth, characterization, and electrical transport properties of magnetron sputtered superconducting Ti40V60 alloy thin films are presented. The films exhibit low surface roughness and tunable transport properties. As…
Understanding the growth of organic semi-conducting molecules with shape anisotropy is of high relevance to the processing of optoelectronic devices. This work provides insight into the growth of thin films of the prototypical rodlike…
Thin film deposition on weakly interacting substrates exhibits a unique growth mode characterized by initially strong island formation and rapidly increasing roughness, which reaches a maximum and subsequently decreases as the film returns…
The behavior as a function of temperature of very thin films (10 to 200 nm) of pentylcyanobiphenyl (5CB) on silicon substrates is reported. In the vicinity of the nematic/isotropic transition we observe a coexistence of two regions of…
During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads…
Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such…
Thin films formed from small molecules rapidly gain importance in different technological fields. To explain their growth, methods developed for zero--dimensional atoms as the film forming particles are applied. However, in organic thin…