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Ni thin films grown by thermal evaporation and sputtering under different deposition conditions are characterized for structural and morphological properties using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. XRD…
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…
In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy under various growth…
Cuprous oxide (Cu2O) films from 25 nm to 1500 nm were electrodeposited on n-Si(100) and Ni/n-Si(100) substrates from aqueous solution at room temperature. X-ray diffraction and transmission electron microscopy imaging show that the Cu2O…
10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according…
Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy…
Highly textured chalcogenide films have recently gained significant interest for phase-change memory applications. Several reports have highlighted that programming efficiency improves in devices featuring superlattice stacks, such as…
The interface between hexagonal ZnO films and cubic MgO (001) substrates, fabricated through molecular beam epitaxy, are thoroughly investigated. X-ray diffraction and (scanning) transmission electron microscopy reveal that, at the…
Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical…
Theoretical calculations and experimental observations show MoTe2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2…
Thin films of polycrystalline $\beta$-Mn structure CoZn have been grown on thermally oxidized Si substrates by co-sputtering from elemental targets followed by annealing. A range of films grown with variable Co deposition power and fixed Zn…
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality…
Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large…
Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in…
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with…
We have performed fluorescence x-ray absorption fine-structure (XAFS) measurements from 20-200 K on a 5000 \AA, c-axis film of YBa_2Cu_3O_{7-\delta} (YBCO) on MgO (Tc=89 K) using photons polarized perpendicular to the film. These data are…
The thermal growth of silicon oxide films on Si in dry O2 is modelled as a dynamical system, assuming that it is basically a diffusion-reaction phenomenon. Relevant findings of the last decade are incorporated, as structure and composition…
The epitaxial growth of anatase (001) films deposited by pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) on SrTiO3 (001) (STO) single crystals has been studied using X-ray diffraction and surface sensitivity UHV techniques.…
We study how single-crystal chromium films of uniform thickness on W(110) substrates are converted to arrays of three-dimensional (3D) Cr islands during annealing. We use low-energy electron microscopy (LEEM) to directly observe a kinetic…
We present a comparative study of copper film growth with a constant energy neutral beam, thermal evaporation, dc magnetron sputtering, high-power impulse magnetron sputtering (HiP-IMS), and bipolar HiPIMS, through molecular dynamics…