Related papers: Mapping of ion beam induced current changes in Fin…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions…
We report a demonstration of a surface ion trap fabricated directly on a highly reflective mirror surface, which includes a secondary set of radio frequency (RF) electrodes allowing for translation of the quadrupole RF null location. We…
The ion beam induced charge technique with proton microprobe is used to characterise newly developed p-n junction large area silicon carbide detectors. They were recently produced as part of the ongoing program to develop a new particle…
An electron-impact ion source based on photoelectron emission was developed for ionization of gases at pressures below 1e-4 mbar in an axial magnetic field in the order of 5 T. The ion source applies only DC fields, which makes it suitable…
Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…
Beam-induced ionization injection (B-III) is currently being explored as a method for injecting an electron beam with a controlled density profile into a plasma wakefield accelerator (PWFA). This process is initiated by the fields of an…
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of…
The electrical conductivity of parallel plate capacitors, with ferroelectric lithium niobate as the dielectric layer, can be extensively and progressively modified by the controlled injection of conducting domain walls. Domain wall-based…
We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening…
In this work, we report a confocal laser induced fluorescence (LIF) configuration, which allows for high spatial resolution measurements of plasma properties in plasma setups and sources with a limited optical access. The proposed LIF…
Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and…
We demonstrate the first application of a liquid-metal ion source for collinear laser spectroscopy in proof-of-principle measurements on naturally abundant In$^+$. The superior beam quality, i.e., the actively stabilized current and energy…
This work presents new experimental results on low-temperature (LT) characterization of local rf properties of passive superconducting (SC) microwave devices using a novel Laser Scanning Microscope (LSM). In this technique, a modulated…
A fast-reading current integrator is developed for high time-resolution and low-noise ion beam diagnostics under both continuous-wave and pulsed operating conditions. The system combines a low-leakage transimpedance front-end with a hybrid…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
The shape and alignment of silver nanoparticles embedded in a glass matrix is controlled using silicon ion irradiation. Symmetric silver nanoparticles are transformed into anisotropic particles whose larger axis is along the ion beam. Upon…
A new methodology for fundamental studies of radiation effects in solids is herein introduced by using a plasma Focused Ion Beam (PFIB). The classical example of ion-induced amorphization of single-crystalline pure Si is used as a…
A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area…
We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the…