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We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…
Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam…
The shape of metal nanoparticles embedded in dielectric matrices influences the optical properties of the composite material. Swift heavy ion irradiation can induce a controllable shape transformation in gold and other metals embedded in…
We present a scanning probe microscopy technique for spatially resolving transport in cold atomic gases, in close analogy with scanning gate microscopy in semiconductor physics. The conductance of a quantum point contact connected to two…
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the…
The ions produced via collisional ionization of the residual gas molecules in vacuum pipe with the circulating electron beam have deleterious effect on the beam properties and may become a limiting factor for the machine's performance. For…
Focused ion beam irradiation of metastable Fe$_{78}$Ni$_{22}$ thin films grown on Cu(100) substrates results in the localized transformation of the originally paramagnetic, face-centered-cubic continuous film into ferromagnetic patterns…
Recent ion source developments resulted in the generation of high brilliance, high current beams of protons and light ions. After extraction and transport the beams with large internal space charge forces have to be captured, bunched and…
In this paper we present the development of a simulation code capable of optimizing the geometry of a spiral inflector designed for axial injection into a cyclotron. To do this, an electric field map of the device is generated by utilizing…
We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas. The QPC and SGM tip act as reflective barriers of a lossy cavity; the conductance through…
We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance…
The formation of a submicron optical cavity on one side of a metal-insulator-metal (MIM) tunneling device induces a measurable electrical current between the two metal layers with no applied voltage. Reducing the cavity thickness increases…
InGaN is an ideal alloy system for optoelectronic devices due its tunable band gap. Yet high-quality InGaN requires high In concentration, which is a challenging issue that limits its use in green-light LEDs and other devices. In this…
Scanning ion conductance microscopy (SICM) can image the surface topography of specimens in ionic solutions without mechanical probe--sample contact. This unique capability is advantageous for imaging fragile biological samples but its…
The development of advanced packaging is essential in the semiconductor manufacturing industry. However, non-destructive testing (NDT) of advanced packaging becomes increasingly challenging due to the depth and complexity of the layers…
We present a broadly applicable in situ method for profiling ion beams using electrostatic deflectors and a Faraday cup. By deconvolving the detector geometry from the resulting current profiles, spatially resolved absolute current density…
The ELISE test facility hosts a RF negative ion source, equipped with an extraction system which should deliver half the current foreseen for the ITER Neutral Beam Injector, keeping the ratio of co-extracted electrons to ions below 1. An…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
Two-level modeling for nanoscale pattern formation on silicon target by Ar$^+$ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength…
Interference of standing waves in electromagnetic resonators forms the basis of many technologies, from telecommunications and spectroscopy to detection of gravitational waves. However, unlike the confinement of light waves in vacuum, the…