Related papers: Mapping of ion beam induced current changes in Fin…
Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the…
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are…
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV,…
The ballistic motion of electrons in graphene encapsulated in hexagonal boron nitride (hBN) promises exciting opportunities for electron-optics devices. A narrow electron beam is desired, with both the mean free path and coherence length…
We have developed a real-time beam current density meter for charged particle beams. It measures the mean current density by collimating a uniform and large diameter primary beam. The suppression of the secondary electrons and the…
For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High…
The interaction of Na atoms with a surface was probed by inserting a nanofabricated material grating into one arm of an atom interferometer (IFM). This technique permits a direct measurement of the change in phase and coherence of matter…
Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the…
We examine the effect of an FET geometry on the charge ordering phase diagram of transition metal oxides using numerical simulations of a semiclassical model including long-range Coulomb fields, resulting in nanoscale pattern formation. We…
Measuring field-aligned currents (FACs) using magnetic field observations provides a powerful means to probe the multi-scale interactions between the magnetosphere, ionosphere and thermosphere. In this study, we apply the curlometer…
We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690 (2016)] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the…
The operation of gas detectors is often limited by secondary effects, originating from avalanche-induced photons and ions. Ion backflow is one of the effects limiting the operation of a gas detector at high flux, by giving rise to space…
We propose an experiment for the first proof of the type I electric Aharonov-Bohm effect in an ion interferometer for hydrogen. The performances of three different beam separation schemes are simulated and compared. The coherent ion beam is…
Ion beam analysis techniques are among the most powerful tools for advanced material characterization. Despite their growing relevance in a widening number of fields, most ion beam analysis facilities still rely on the oldest accelerator…
In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural…
Metal atoms on graphene, when ionized, can act as a point charge impurity to probe a charge response of graphene with the Dirac cone band structure. To understand the microscopic physics of the metal-atom-induced charge and spin…
We perform nanosecond-resolution multiplexed readout on six same-chip superconducting microwave resonators. This allows us to pinpoint the impact positions of ionizing radiation on the chip by measuring the differential time of flight of…
Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
Liquid-based applications of biomolecule-decorated field-effect transistors (FETs) range from biosensors to in vivo implants. A critical scientific challenge is to develop a quantitative understanding of the gating effect of charged…