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During the dielectric breakdown process of thin solid-state nanopores, the application of high voltages may cause the formation of multi-nanopores on one chip, which number and sizes are important for their applications. Here, simulations…
Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and…
A modified electron beam induced deposition method using a parallel beam of electrons is developed. The method relies on the build-up of surface potential on an insulating surface exposed to an electron beam. Presence of sharp edges on the…
Evolution of electronic inhomogeneities with back-gate voltage in graphene on SiO$_2$ was studied using room temperature scanning tunneling microscopy and spectroscopy. The reversal of local contrast in some places in the STS maps and sharp…
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center…
We investigate the effect of focused-ion-beam (FIB) irradiation on spin waves with sub-micron wavelengths in Yttrium-Iron-Garnet (YIG) films. Time-resolved scanning transmission X-ray (TR-STXM) microscopy was used to image the spin waves in…
A high-performance Scintillator Ion Beam Monitor (SIBM) provides diagnostics across a range of isotopes, energies, and intensities employing a machine-vision camera with two novel scintillator targets movable into/out of the beam without…
Laser-driven operations are a common approach for engineering one- and two-qubit gates in trapped-ion arrays. Measuring key parameters of these lasers, such as beam sizes, intensities, and polarizations, is central to predicting and…
The Ion Beam Induced Charge (IBIC) technique is widely used to characterize the electronic properties of semiconductor materials and devices. Its main advantage over other charge collection microscopies stems in the use of MeV ion probes,…
Electron flow through a quantum point contact in presence of spin-orbit coupling is investigated theoretically in the context of the scanning gate microscopy (SGM) conductance mapping. Although in the absence of the floating gate the…
The ionization profile monitors (IPMs) are used to measure the beam size in synchrotrons. Both the Fermilab Recycler and Main Injector (MI) machines have IPMs. However, they were not well understood enough to provide confidence in their…
Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties…
Precision experiments in the parity violating electron scattering (PVES) sector is one the leading methods to probe physics beyond the standard model (SM). A large part of the physics program being envisioned for future facilities such as…
Spincoated polystyrene films of different thickness from 78 nm to 1.3 {\mu}m on silicon wafers were treated by nitrogen ions with an energy of 20 keV. Ellipsometric measurements and FTIR spectra showed modification of the surface layer…
Electron beam-induced current (EBIC) imaging in the scanning transmission electron microscope (STEM), STEM-EBIC, provides direct access to carrier transport at the nanoscale. While well established in bulk SEM geometries, its application to…
The Field Ion Microscope (FIM) can be used to characterize the atomic configuration of the apex of sharp tips. These tips are well suited for Scanning Probe Microscopy (SPM) since they predetermine SPM resolution and electronic structure…
Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence, detectors with fast…
Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to…
InSb nanoflags represent an interesting platform for quantum transport and have recently been exploited in the study of hybrid planar Josephson junctions. Due to the uncovered semiconductor surface, they are also good candidates for surface…
Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end,…