Related papers: Analyzing capacitance-voltage measurements of vert…
Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and Si (n-type) doping using high-resolution cathodoluminescence…
We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D.…
Electronic states in nanographite ribbons with zigzag edges are studied using the extended Hubbard model with nearest neighbor Coulomb interactions. The electronic states with the opposite electric charges separated along both edges are…
We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing…
Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, we investigated the…
A Poisson-Boltzmann approach is used to determine the double-layer integral and differential capacitances in a finite-length situation for an electrolytic cell. By means of simple analytical calculations, it is shown how these quantities…
In this chapter, semi-analytical models for the calculation of the quantum capacitance of both monolayer and bilayer graphene and its nanoribbons, are presented. Since electron-hole puddles are experimental facts in all graphene samples,…
Capacitance measurements as a function of voltage, frequency and temperature are useful tools to identify fundamental parameters that affect solar cell operation. Techniques such as capacitance-voltage (CV), Mott-Schottky analysis and…
Van der Waals moir\'e materials have emerged as a highly controllable platform to study the electronic correlation phenomena. In particular, robust correlated insulating states have recently been discovered at both integer and fractional…
We present electrical transport measurements of a van-der-Waals heterostructure consisting of a graphene nanoribbon separated by a thin boron nitride layer from a micron-sized graphene sheet. The interplay between the two layers is…
We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array…
We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonator and measured the resonance frequency of the circuit.…
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even…
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…
The capacitance of arbitrarily shaped objects is reformulated in terms of the Neumann-Poincar\'{e} operator. Capacitance is simply the dielectric permittivity of the surrounding medium multiplied by the area of the object and divided by the…
We have investigated the confinement of 3-D vortices in specific cases of Type-II ($\kappa = 2$) nano-superconducting devices. The emergent pattern of vortices greatly depends on the orientation of an applied magnetic field (transverse or…
The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetric defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the…
Controlling doping is essential for a successful integration of semiconductor materials into device technologies. However, the assessment of doping levels and the distribution of charge carriers in carbon nanotubes or other nanoscale…
A new method of accurately calculating the capacitance of realistic ice particles is described: such values are key to accurate estimates of deposition and evaporation rates in NWP models. The trajectories of diffusing water molecules are…
Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent…