Related papers: Analyzing capacitance-voltage measurements of vert…
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…
We investigate the controllability of quantum electrons trapped in a two-dimensional device, typically a MOS field-effect transistor. The problem is modeled by the Schr\"odinger equation in a bounded domain coupled to the Poisson equation…
A wireless vapor sensor based upon the quantum capacitance effect in graphene is demonstrated. The sensor consists of a metal-oxide-graphene variable capacitor (varactor) coupled to an inductor, creating a resonant oscillator circuit. The…
In this work, methods to determine more accurate doping profiles in semiconductors is explored where trap-induced artifacts such as hysteresis and doping artifacts are observed. Specifically in CIGS, it is shown that this fast…
We analyze the effect of an external electric field on the electronic structure of molecules which have been recently studied as molecular wires or diodes. We use a self-consistent tight binding technique which provides results in good…
The mass density of nanowires is determined using in-situ resonance frequency experiments combined with quasi-static nanotensile tests. Our results reveal a mass density of 7.36 g/cm3 on average which is below the theoretical density of…
We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed…
Granularity, anisotropy, local lattice distortions and their dependence on dopant concentration appear to be present in all cuprate superconductors, interwoven with the microscopic mechanisms responsible for superconductivity. Here we…
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The…
The measured capacitance, modulus and strength of carbon nanotube-polyaniline (CNT-PANI) composite electrodes render them promising candidates for structural energy storage devices. Here, CNT-PANI composite electrodes are manufactured with…
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in…
We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping…
We measure the resonance line shape of atomic vapor layers with nanoscale thickness confined between two sapphire windows. The measurement is performed by scanning a probe laser through resonance and collecting the scattered light. The line…
If a clean two-dimensional electron gas (2DEG) with small concentration $n$ comprises one (or both) electrodes of a plane capacitor, the resulting capacitance $C$ can be larger than the "geometric capacitance" $C_g$ determined by the…
We performed electronic transport measurements on 1D InAs quantum wires. In sufficiently disordered wires, transport is dominated by Coulomb blockade, and the conductance can be well described by tunneling through a quantum dot embedded…
The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured…
A scanning tunneling microscope (STM) supplemented with a force sensor is used to study the mechanical properties of a novel metallic nanostructure: a freely suspended chain of single gold atoms. We find that the bond strength of the…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence,…
Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated…