Related papers: Proposal for a nanoscale variable resistor/electro…
A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…
We present a physical model for electronic switching in cantilever based nano-electro-mechanical field effect transistors, focusing on the steepness of its switching curve. We find that the subthreshold swing of the voltage transfer…
We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15\,nm above a local gate electrode. The charge density in the…
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are…
We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation…
We investigate the conductance properties of a hybrid ferromagnet-semiconductor structure consisting of a confined two-dimensional electron gas and a transverse ferromagnetic strip on top. Within the framework of the Landauer-B\"uttiker…
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of…
The electrochemical switching of SrCoOx-based non-volatile memory with thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivity (s) as the gate insulator. We first examined…
We present an integrated switch that combines plasmonic and neuromorphic technologies with a single sub-stoichiometric VO2-x nanoparticle. The presented device acts as a versatile plasmonic switch with dual thermal and electrical…
We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonator and measured the resonance frequency of the circuit.…
The electrical conductance G of magnetostrictive nanocontacts made from Galfenol Fe73Ga27 can be reproducibly switched between on and off states in a low magnetic field of 20 to 30 mT at 10 K. The switching behavior is in agreement with the…
Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising…
High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that…
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and…
Several experiments have recently reported on gate-tunable superconducting properties in metallic devices, holding promise for the realization of cryogenic switches, tunable resonators, and superconducting logic. In particular, the…
We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a…
The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…
Metal nanowires exhibit a number of interesting properties: their electrical conductance is quantized, their shot-noise is suppressed by the Pauli principle, and they are remarkably strong and stable. We show that many of these properties…
Micro- and nano-electromechanical resonators are a fundamental building block of modern technology, used in environmental monitoring, robotics, medical tools as well as fundamental science. These devices rely on dedicated electronics to…