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Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

Emerging Technologies · Computer Science 2014-04-02 Mostafizur Rahman , Pritish Narayanan , Csaba Andras Moritz

Magnonics is a rapidly growing field, attracting much attention for its potential applications in data transport and processing. Many individual magnonic devices have been proposed and realized in laboratories. However, an integrated…

Mesoscale and Nanoscale Physics · Physics 2023-12-01 Xu Ge , Roman Verba , Philipp Pirro , Andrii V. Chumak , Qi Wang

We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…

Other Condensed Matter · Physics 2008-02-18 Xihua Wang , Yu Chen , Mi K. Hong , Shyamsunder Erramilli , Pritiraj Mohanty

We report the observation of discrete displacement of nanomechanical oscillators with gigahertz-range resonance frequencies at millikelvin temperatures. The oscillators are nanomachined single-crystal structures of silicon, designed to…

Other Condensed Matter · Physics 2009-11-11 Alexei Gaidarzhy , Guiti Zolfagharkhani , Robert L. Badzey , Pritiraj Mohanty

Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the…

Materials Science · Physics 2013-01-22 Dieter Weber , Ulrich Poppe

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…

We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a…

Mesoscale and Nanoscale Physics · Physics 2015-09-22 T. W. Larsen , K. D. Petersson , F. Kuemmeth , T. S. Jespersen , P. Krogstrup , J. Nygard , C. M. Marcus

A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can…

Mesoscale and Nanoscale Physics · Physics 2015-04-21 Ayan K. Biswas , Jayasimha Atulasimha , Supriyo Bandyopadhyay

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…

Mesoscale and Nanoscale Physics · Physics 2016-10-27 Robert Göckeritz , Nico Homonnay , Alexander Müller , Bodo Fuhrmann , Georg Schmidt

We consider electronic transport through a suspended voltage-biased nanowire. By coupling the tunneling current to a transverse magnetic field, vibrational modes of the wire are excited which influences the current-voltage characteristics…

Mesoscale and Nanoscale Physics · Physics 2010-11-08 Gustav Sonne

We present a theoretical approach for understanding the stability of simple metal nanowires, in particular monovalent metals such as the alkalis and noble metals. Their cross sections are of order one nanometer so that small perturbations…

Mesoscale and Nanoscale Physics · Physics 2015-06-23 Lan Gong , J. Bürki , Charles A. Stafford , Daniel L. Stein

We propose a simple analytical model of a metal-oxide-semiconductor field-effect transistor with a lateral resonant gate based on the coupled electromechanical equations, which are self-consistently solved in time. All charge densities…

Studies involving nanomechanical motion have evolved from its detection and understanding of its fundamental aspects to its promising practical utility as an integral component of hybrid systems. Nanomechanical resonators' indispensable…

Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm…

Condensed Matter · Physics 2009-11-07 F. Leonard , J. Tersoff

Strong coupling between electronic and mechanical degrees of freedom is a basic requirement for the operation of any nanoelectromechanical device. In this Review we consider such devices and in particular investigate the properties of small…

Mesoscale and Nanoscale Physics · Physics 2010-04-07 Robert I. Shekhter , Fabio Santandrea , Gustav Sonne , Leonid Y. Gorelik , Mats Jonson

We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 Nikita Simonian , Andreas Mayr , Konstantin K. Likharev

We describe nonlinear phonon-thermoelectric devices where charge current and electronic and phononic heat currents are coupled, driven by voltage and temperature biases, when phonon-assisted inelastic processes dominate the transport. Our…

Mesoscale and Nanoscale Physics · Physics 2015-07-31 Jian-Hua Jiang , Manas Kulkarni , Dvira Segal , Yoseph Imry

Fabrication of superconducting nanomechanical resonators for quantum research, detectors and devices traditionally relies on a lithographic process, resulting in oscillators with sharp edges and a suspended length limited to a few 100…

An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model,…

Atomic Physics · Physics 2013-09-16 Seth C. Caliga , Cameron J. E. Straatsma , Alex A. Zozulya , Dana Z. Anderson