Related papers: Proposal for a nanoscale variable resistor/electro…
The voltage dependence of nanoelectromechanical effects in a system where the quantized mechanical vibrations of a quantum dot are coupled to coherent tunneling of electrons through a single level in the dot is studied. It is found that…
In solving the Schr\"odinger equation to simulate a nanoscale circuit, we note that the mean free path for electrons in some metals is as large as 48 nm. Thus, the wavefunction may propagate coherently through wires corresponding to the…
The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of…
We analyze the quantum information processing capability of a superconducting transmon circuit used to mediate interactions between quantum information stored in a collection of phononic crystal cavity resonators. Having only a single…
Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the…
The scaling limitations of conventional transistors demand alternative device concepts capable of dynamic reconfigurability at the atomic scale. Resistive switching (RS), a key mechanism for neuromorphic computing and non-volatile memory,…
The description of electron-electron interactions in transport problems is both analytically and numerically difficult. Here we show that a much simpler description of electron transport in the presence of interactions can be achieved in…
Hysteresis in the current-voltage characteristic in a superconducting nanowire reflects an underlying bistability. As the current is ramped up repeatedly, the state switches from a superconductive to a resistive one, doing so at random…
The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from…
Tunneling transport measurements performed on single particles and on arrays of Fe3O4 (magnetite) nanocrystals provide strong evidence for the existence of the Verwey metal-insulator transition at the nanoscale. The resistance measurements…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first…
One of the biggest challenges in implementation of Quantum circuits or Photonic Integrated Circuits in general is the inability to create efficient relay devices due to small decoherence time, high delays and poor interconnections that…
We demonstrate that a high kinetic inductance disordered superconductor can realize a low microwave loss, non-dissipative circuit element with an impedance greater than the quantum resistance ($R_Q = h/4e^2 \simeq 6.5k\Omega$). This…
The excellent mechanical properties make graphene promising for realizing nanomechanical resonators with high resonant frequencies, large quality factors, strong nonlinearities, and the capability to effectively interface with various…
We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be…
Magnetite (Fe$_{3}$O$_{4}$), an archetypal transition metal oxide, has been used for thousands of years, from lodestones in primitive compasses[1] to a candidate material for magnetoelectronic devices.[2] In 1939 Verwey[3] found that bulk…