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As photonic technologies continue to grow in multidimensional aspects, integrated photonics holds a unique position and continuously presents enormous possibilities to research communities. Applications span across data centers,…

Ensuring end-to-end security in image sensors has become essential as visual data can be exposed through multiple stages of the imaging pipeline. Advanced protection requires encryption to occur before pixel values appear on any readout…

We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop…

When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…

Monolithic Active Pixel Sensors (MAPS) combine the sensing part and the front-end electronics in the same silicon layer, making use of CMOS technology. Profiting from the progresses of this commercial process, MAPS have been undergoing…

The physics aims at the proposed high-energy $e^+e^-$ collider CLIC pose challenging demands on the performance of the detector system. Precise hit-time tagging, an excellent spatial resolutions, and a low mass are required for the vertex…

The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of…

A Silicon-on-insulator (SOI) perfectly vertical fibre-to-chip grating coupler is proposed and designed based on engineered subwavelength structures. The high directionality of the coupler is achieved by implementing step gratings to realize…

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already…

Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their…

3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high…

We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly…

We report results on a tracking performance study performed using a beam telescope made of 50 micron-thick CMOS pixel sensors on the 1.5 GeV electron beam at the LBNL ALS.

We present prototype modules for a tracking detector consisting of multiple layers of 0.25 mm diameter scintillating fibers that are read out by linear arrays of silicon photomultipliers. The module production process is described and…

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…

We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix…

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in…

The MALTA CMOS monolithic silicon pixel sensors has been developed in the Tower 180 nm CMOS imaging process. It includes an asynchronous readout scheme and complies with the ATLAS inner tracker requirements for the HL-LHC. Several 4-chip…

For large scale applications, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the state of the art in pixel detector technology to date. They have been developed and start to be used as tracking…

Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge…