Related papers: A Sensor with Analog and Digital Pixels in 0.15 mi…

Ultra-sensitive short-wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS-compatible silicon technological platform has been challenging due to…

To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche…

The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \mu s read-out time. Its performances are quite close to the ILD vertex…

Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the…

In the context of the Silicon tracking for a Linear Collider (SiLC) R&D collaboration, a highly compact mixed-signal chip has been designed in 130nm CMOS technology intended to read Silicon strip detectors for the experiments at the future…

The upgrade to the High Luminosity Large Hadron Collider will pose unprecedented challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives…

Wavelength-dependent polarization state of light carries crucial information about light-matter interactions. However, its measurement is limited to bulky, energy-consuming devices, which prohibits many modern, portable applications. Here,…

Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…

After the successful installation and first operation of the upgraded Inner Tracking System (ITS2), which consists of about $10\,$m$^2$ of monolithic silicon pixel sensors, ALICE is pioneering the usage of bent, wafer-scale pixel sensors…

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration…

Photonic systems based on microring resonators have a fundamental constrain given by the strict relationship among free spectral range (FSR), total quality factor (QT) and resonator size, intrinsically making filter spacing, photonic…

In the construction of High-Luminosity Large Hadron Collider (HL-LHC) and Future Circular Collider (FCC) experiments, 3D pixel sensors have become indispensable components due to their superior radiation hardness, fast response, and low…

We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future X-ray astronomy satellites that enable us to observe in the wide energy band of 0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8 {\mu}m…

The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical…

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…

Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…

Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments call for an increased use of timing information in addition to the position measurement of pixel detectors. This adds one dimension to the…

The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 {\mu}m. In Topmetal-M, a novel…

The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…

We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…