Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
Instrumentation and Detectors
2016-03-23 v1 High Energy Physics - Experiment
Abstract
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.
Cite
@article{arxiv.1601.00459,
title = {Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade},
author = {Piotr Rymaszewski and Marlon Barbero and Patrick Breugnon and Stépahnie Godiot and Laura Gonella and Tomasz Hemperek and Toko Hirono and Fabian Hügging and Hans Krüger and Jian Liu and Patrick Pangaud and Ivan Peric and Alexandre Rozanov and Anqing Wang and Norbert Wermes},
journal= {arXiv preprint arXiv:1601.00459},
year = {2016}
}
Comments
9 pages, 9 figures, TWEPP 2015 Conference, submitted to JINST