Related papers: Energy transfer processes in Er-doped SiO2 sensiti…
Er-doped phosphate glasses were fabricated by melt-quenching technique. The changes in their thermal, structural and luminescence properties with the addition of Al2O3, TiO2 or ZnO were studied. Physical and thermal properties were…
Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree…
In semiconductors, exciton or charge carrier diffusivity is typically described as an inherent material property. Here, we show that the transport of excitons (i.e., bound electron-hole pairs) in CsPbBr3 perovskite nanocrystals (NCs)…
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron…
We present an electrostatic theory of band gap renormalization in atomically-thin semiconductors that captures the strong sensitivity to the surrounding dielectric environment. In particular, our theory aims to correct known band gaps, such…
Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in…
The realization of a scalable architecture for quantum information processing is a major challenge for quantum science. A promising approach is based on emitters in nanostructures that are coupled by light. Here, we show that erbium dopants…
We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy…
The increased spectral resolution allowed by the use of extremely thin vapor cells has led to the observation of interesting behaviour of alkali transitions when placed in a magnetic field. Particularly, transitions obeying an apparent…
Photo-doped states in strongly correlated charge transfer insulators are characterized by $d$-$d$ and $d$-$p$ interactions and the resulting intertwined dynamics of charge excitations and local multiplets. Here we use femtosecond x-ray…
Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and…
Silicon nanocrystals (SiNCs) have been under active investigation in the last decades and have been considered as a promising candidate for many optoelectronic applications including highly-efficient solar cells. Some of the fundamental…
We present a first-principles study of defect formation and electronic structure of erbium (Er)-doped yttria (Y$_2$O$_3$). This is an emerging material for spin-photon interfaces in quantum information science due to the narrow linewidth…
Wave packet propagation succeeding electron transfer (ET) from alizarin dye molecules into the nanocrystalline TiO2 semiconductor has been studied by ultrafast transient absorption spectroscopy. Due to the ultrafast time scale of the ET…
Reliable simultaneous optical sensing of pressure and temperature under extreme and dynamically fluctuating conditions remains a major challenge due to intrinsic cross-sensitivity between these two thermodynamic parameters. Multimodal…
The photoluminescence properties of Yb doped Y2O3 nanoparticles are investigated in visible region. The presence of peaks at 335 nm and 370 nm in the excitation spectra of bulk as well as in nano Yb: Y2O3 and their absence in pure Y2O3…
We report photoemission studies of polycrystalline samples of Sr-doped GdTiO_{3+delta}, which undergoes a Mott-Hubbard-like metal-insulator transition at a Ti-concentration of about 20%. The Ti 3d-derived valence band near the Fermi level…
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…
We have studied the temperature behavior of the electron spin resonance (ESR) spectra of nitrogen (N) donors in n-type 6H SiC crystals grown by Lely and sublimation sandwich methods (SSM) with donor concentration of 10^17 cm^(-3) at…
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and…