Related papers: Energy transfer processes in Er-doped SiO2 sensiti…
The exact mechanism responsible for the tenfold enhancement of superconducting transition temperature (Tc) in a monolayer iron selenide (FeSe) on SrTiO3(STO) substrate over that of bulk FeSe, is an open issue. We present here a coordinated…
We propose a simplified rate-equation model for the 1500 nm to 980 nm upconversion in Er$^{3+}$. The simplifications, based on typical experimental conditions as well as on conclusions based on previously published more advanced models,…
We developed a theory of electric and thermoelectric conductivity of lightly doped SrTiO$_3$ in the non-degenerate region $k_B T \geq E_F$, assuming that the major source of electron scattering is their interaction with soft transverse…
We demonstrate for the first time that impact ionization (II) [the inverse of Auger recombination (AR)] occurs with very high efficiency in semiconductor nanocrystals (NCs). Interband optical excitation of PbSe NCs at low pump intensities,…
We report a significant enhancement of room-temperature photoluminescence from trivalent erbium-doped (Er3+) silicon nitride (Si3N4) metasurfaces at the telecommunication wavelength prepared via ion implantation. The metasurfaces,…
Er-doped Al$_2$O$_3$ is a promising host for telecom-band integrated photonics. Here we combine ab initio calculations with a symmetry-resolved analysis to elucidate substitutional Er on the Al site (Er$_\mathrm{Al}$) in…
The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties…
Several models of oxygenated and hydrogenated surfaces of Si quantum wells and Si nanocrystals of variable shapes have been constructed in order to assess curvature effects on energy gaps due to the three Si-suboxides. Si-suboxides in…
Substitution of La by Sr in the 25% Ni doped charge transfer insulator LaFeO3 creates structural changes that inflect the electrical conductivity caused by small polaron hopping via exchange interactions and charge transfer. The…
The interaction of the dye molecule N3 (cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)) with the ultra-thin oxide layer on a AlNi(110) substrate, has been studied using synchrotron radiation based photoelectron…
Er$^{3+}$:Y$_2$SiO$_5$ crystal is a promising candidate with a great variety of its potential applications in quantum information processing and quantum communications ranging from optical/microwave quantum memories to circuit QED and…
We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in…
Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…
K$_2$YF$_5$ crystals doped with lanthanide ions have a variety of possible optical applications. Owing to the low symmetry of the system, the crystal structure cannot be unambiguously determined by x-ray diffraction. However,…
The surface ligands in colloidal metal halide perovskites influence not only their intrinsic optoelectronic properties but also their interaction with other materials and molecules. We explore donor-acceptor interactions of CsPbBr3…
Charge transfer between molecules and catalysts plays a critical role in determining the efficiency and yield of photo-chemical catalytic processes. In this paper, we study light-induced electron transfer between transition metal doped…
Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first-principles hybrid density functional study of the structure,…
4H silicon carbide (SiC) polytype is preferred over other SiC polytypes for high-power, high-voltage, and high-frequency applications due to its superior electrical, thermal, and structural characteristics. In this manuscript, we provide a…
We study the luminescence of unintentionally doped and Si-doped In$_x$Ga$_{1-x}$N nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emission band observed at 300 K from the unintentionally doped…
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…