Related papers: High Density Through Silicon Via (TSV)
Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using…
As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate…
This special session on 3D TSV's will highlight some of the fabrication processes and used technologies to create vias from the frontside of an active circuit to its backside and potential implementation solutions to form complex systems…
The semiconductor industry's rapid advancement pushes conventional two-dimensional technology to its utmost limitations in terms of scaling, performance, and cost factors. These challenges drive the usage of 3D technology in the production…
In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary…
Application Specific Integrated Circuits (ASICs) are commonly used to efficiently process the signals from sensors and detectors in space. Wire bonding is a space qualified technique of making interconnections between ASICs and their…
Application Specific Integrated Circuits (ASICs) are used in space-borne instruments for signal processing and detector readout. The electrical interface of these ASICs to frontend printed circuit boards (PCBs) is commonly accomplished with…
3-D integrated circuits (3-D ICs) offer performance advantages due to their increased bandwidth and reduced wire-length enabled by through-silicon-via structures (TSVs). Traditionally TSVs have been considered to improve the thermal…
Two dimensional (2D) integration has been the traditional approach for IC integration. Due to increasing demands for providing electronic devices with superior performance and functionality in more efficient and compact packages, has driven…
We propose superconducting-semiconducting (super-semi) qubit and coupler designs based on high-quality, compact through-silicon vias (TSVs). An interposer "probe" wafer containing TSVs is used to contact a sample wafer with, for example, a…
3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also…
Emerging 3D chips stacking and MEMS/Sensors packaging technologies are using DRIE (Deep Reactive Ion Etching) to etch through-silicon via (TSV) for advanced interconnections. The interconnection step can be done prior to or post CMOS…
This work focuses on the fabrication of niobium through silicon vias (TSV) superconductors interconnects. The effect of supercycle of sequential oxidation and chemical etching process on the through-etch wall quality was investigated. It…
Through-silicon vias (TSVs) enable dense vertical interconnects in 3D-IC and chiplet systems, but their metal-oxide-silicon structure introduces significant parasitic coupling paths that can degrade the spectral purity of sensitive RF…
A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out…
High-transmissivity all-dielectric metasurfaces have recently attracted attention towards the realization of ultra-compact optical devices and systems. Silicon based metasurfaces, in particular, are highly promising considering the…
A fabrication process has been developed for fully planarized Nb-based superconducting inter-layer connections (vias) with minimum size down to 250 nm for superconductor very large scale integrated (VLSI) circuits with 8 and 10…
The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge towards building a large-scale quantum computer. In particular, transmons require a high-quality-factor…
The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D…
Thin-film-like high temperature superconducting Bi2Sr2CaCu2O8+x single crystals (TSB) with a typical thickness of 20-200 nm is produced by mechanical exfoliation. The TSB, which shows excellent superconductivity, can adhere firmly to the…