Related papers: Transverse rectification in density-modulated two-…

We investigate the dynamics of a two-dimensional electron gas (2DEG) under circular polarized microwave radiation in presence of dilute localized impurities. Inspired by recent developments on Floquet topological insulators we obtain the…

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise…

A simple hot electron thermocouple is realized in a two-dimensional electron system (2DES) and used to measure the diffusion thermopower of the 2DES at zero magnetic field. This hot electron technique, which requires no micron-scale…

We develop a theory of nonlinear response to an electric field of a two-dimensional electron gas (2DEG) placed in a classically strong magnetic field. The latter leads to a non-linear current-voltage characteristic at a relatively weak…

Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune…

This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with their applications as building blocks of energy management…

We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a…

The current in response to a bias in certain two-dimensional electron gas (2DEG), can have a nonzero transverse component under a finite magnetic field applied in the plane where electrons are confined. This phenomenon known as planar Hall…

The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…

We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within…

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the…

Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly…

Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The…

The modulation depth of 2-D electron gas (2DEG) based THz modulators using AlGaAs/GaAs heterostructures with metal gates is inherently limited to < 30%. The metal gate not only attenuates the THz signal (> 90%) but also severely degrades…

Using an ultra-low temperature, high magnetic field scanning probe microscope, we have measured electric potentials of a deeply buried two dimensional electron gas (2DEG). Relying on the capacitive coupling between the 2DEG and a resonant…

Structural defects in 2D-transition metal dichalcogenides are critical in modulating their optical and electrical behavior. Nevertheless, precise defect control within the monolayer regime poses a significant challenge. Herein, a…

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions,…

Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs.…

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature.…

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…