Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

I. Hoxha; S. A. Vitkalov; N. A. Zimbovskaya; M. P. Sarachik; T. M. Klapwijk

Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

Mesoscale and Nanoscale Physics 2007-05-23 v1 Strongly Correlated Electrons

Authors: I. Hoxha , S. A. Vitkalov , N. A. Zimbovskaya , M. P. Sarachik , T. M. Klapwijk

Abstract

Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 \approx n_2$ . Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.

Keywords

two-dimensional electron gas microwave resonators thermal properties of materials

Cite

@article{arxiv.cond-mat/0110331,
  title  = {Microwave Rectification at the Boundary between Two-Dimensional Electron Systems},
  author = {I. Hoxha and S. A. Vitkalov and N. A. Zimbovskaya and M. P. Sarachik and T. M. Klapwijk},
  journal= {arXiv preprint arXiv:cond-mat/0110331},
  year   = {2007}
}

Comments

8 pages, 6 figures

Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

Abstract

Keywords

Cite

Comments

Related papers