Related papers: Transverse rectification in density-modulated two-…
The two-dimensional electron gas (2DEG) in reduced strontium titanate offers a versatile platform for oxide electronics, yet its dissipation mechanisms under field driven charge fluctuations remain poorly understood. Here, we combine…
Thermal management has become a promising field in recent years due to the limitation of energy resources and the global warming. An important topic in improving the efficiency of thermal energy utilization is how to control the flows of…
We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser…
The functional-renormalization-group aided density-functional theory (FRG-DFT) is applied to the two-dimensional homogeneous electron gas (2DHEG). The correlation energy of the 2DHEG is derived as a function of the Wigner-Seitz radius $…
We consider the hydrodynamic flow of an electron fluid in a channel formed in a two-dimensional electron gas (2DEG) with no-slip boundary conditions. To generate vorticity in the fluid the flow is influenced by an array of micromagnets on…
At low temperatures, the transport coefficients in the disordered electron gas acquire quantum corrections as a result of the complex interplay of disorder and interactions. The interaction corrections to the electric conductivity have…
We theoretically investigate spin transport in a junction system composed of a ferromagnetic insulator (FI) and a two-dimensional electron gas (2DEG) with both Rashba and Dresselhaus spin-orbit interactions. We briefly present our findings…
We have addressed the existing ambiguity regarding the effect of process-induced strain in the underlying GaN layer on AlGaN/GaN heterostructure properties. The bandgaps and offsets for AlGaN on strained GaN are first computed using a cubic…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…
The electronic bandgap of a material is often fixed after fabrication. The capability to realize on-demand and non-volatile control over the bandgap will unlock exciting opportunities for adaptive devices with enhanced functionalities and…
We demonstrate that a novel device design, where a shape-engineered tilted-leg thermopile structure is employed, significantly enhances the output voltage in the transverse direction. Owing to the shape engineering of the leg geometry, an…
Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…
In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a…
Utilizing ultrafast light-matter interaction to manipulate electronic states of quantum materials is an emerging area of research in condensed matter physics. It has significant implications for the development of future ultrafast…
Electric dipole radiation can be controlled by coherent optical feedback, as has previously been studied by modulating the photonic environment for point dipoles placed both in optical cavities and near metal mirrors. In experiments…
We calculate the resistivity of 2D electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be universal function of temperature,…
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
We show that the Rashba effect at the polar perovskite surfaces and interfaces can be tuned by manipulating the two-dimensional electron gas (2DEG) by an applied electric field, using it to draw the 2DEG out to the surface or push it deeper…